Schottky diodes based on nanocrystalline p-GaN and n-GaN in thin film form

Nanocrystalline n-GaN and p-GaN in thin film form were deposited onto fused silica substrates by high-pressure d.c. magnetron sputtering of Si (1 at%) and Be (1 at%) doped GaN targets, respectively. Schottky diode structures for both the p- and n-type nanocrystalline GaN (Au/p-GaN/Al and Al/n-GaN/Au) were fabricated out of the above films. Corresponding current–voltage and capacitance–voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories.