کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1689630 | 1011235 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Composition, structural, dielectric and DC characterization of vacuum deposited ZnSe thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
ZnSe thin films with different thicknesses are deposited onto glass substrates under a vacuum of 4Ã10â5 mbar by vacuum evaporation. Rutherford backscattering spectrometry is used to identify the composition of the deposited films. The composition of the deposited films is found to be nearly stoichiometric. The X-ray diffractogram reveals a cubic structure with preferential orientation along the (1 1 1) direction and structural parameters such as crystallite size D, dislocation density δ, strain ε, and lattice parameters are calculated. It is observed that the crystallite size increases from 20.11 to 55.56 nm with increase of film thickness. In the DC conduction studies the conduction mechanism is found to follow an exponential trap distribution with density of states 3.251Ã1048 Jâ1 mâ3. The dielectric constant is calculated as 8.11 [306 K].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 81, Issue 7, 28 February 2007, Pages 928-933
Journal: Vacuum - Volume 81, Issue 7, 28 February 2007, Pages 928-933
نویسندگان
S. Venkatachalam, D. Mangalaraj, Sa.K. Narayandass, K. Kim, J. Yi,