Fabrication of Se-rich Cu(In1-XGaX)Se2 quaternary ceramic target

High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.