Swift heavy ion induced structural evolution in InP

This article reports a comprehensive study on damage evolution in undoped InP due to 100 MeV silver (Ag7+) ion irradiation. Raman and Rutherford back scattering channeling (c-RBS) measurements are employed to bring out two different aspects of disorder in the system. While Raman spectroscopy revealed a monotonic increase in sub-surface strain due to ion irradiation, the later detected heavy damage in the wafer at high fluences. Furthermore, we have estimated the lattice temperature under above irradiation conditions in InP using a unified thermal spike model. The model includes both inelastic thermal spike and elastic collision spike along with the effect of latent heat. This model explains the observed damage evolution of the target. Above experimental techniques in conjunction with the simulation model provides a qualitative explanation of the damage accumulation leading to structural modification in the Ag ion-irradiated InP wafer.