Investigation of resistive switching in graphite-like carbon thin film for non-volatile memory applications

• Graphite-like carbon films were prepared by D C magnetron sputtering.
• Stable and reliable bipolar resistive switching characteristics were observed.
• ON/OFF ratio is about 3; retention time >105 s, and programming voltages <3 V.
• I–V properties in two states can be well explained by the trap-controlled SCLC.
• Other experiment results are added to support the theoretical model.

Graphite-like carbon films were deposited on Al/SiO2/Si substrates by using Direct Current magnetron sputtering method. Stable and reliable bipolar resistive switching (RS) characteristics were observed in Cu/a-C/Al/SiO2/Si multi-layer structures. An ON/OFF ratio of about 3, a retention time of more than 105 s, and switching threshold voltages of less than 3 V were achieved. I–V properties in both low resistance state and high resistance state can be well explained by the space charge limited current model. The observed RS behaviors are attributed to the electron trapping and detrapping at deep level defects in a-C films.