کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1690185 1518951 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sulfide pretreatment effects of liquid phase deposited TiO2 on AlGaAs and its application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Sulfide pretreatment effects of liquid phase deposited TiO2 on AlGaAs and its application
چکیده انگلیسی
The study explored titanium dioxide (TiO2) prepared by liquid phase deposition (LPD) deposited on (NH4)2Sx-treated aluminum gallium arsenide (AlGaAs), including the surface roughness by using atomic force microscopy (AFM) measurements and electrical properties. The leakage current density of MOS capacitor is approximately 6.83 × 10−7 A/cm2 at zero electric field for the sample without any pretreatment. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 4.46 × 1012 cm−2 eV−1 and 3.6 V, respectively. After the 10 min 5% (NH4)2Sx pretreatment, the leakage current density, Dit, and ΔVFB can be improved to 1.04 × 10−7 A/cm2 at zero electric field, 2.28 × 1012 cm−2 eV−1, and 2 V, respectively. The paper also demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using LPD-TiO2 after 10 min sulfide pretreatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 118, August 2015, Pages 100-103
نویسندگان
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