Liquid-phase-deposited high dielectric zirconium oxide for metal-oxide-semiconductor high electron mobility transistors

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to 627 mA/mm, and leakage current is four orders magnitude lower. The gate swing voltage and off-state breakdown were also improved while applying ZrO2 oxide layer.