Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs

We have investigated the selective etching of 50 μm diameter via-holes for etch depth >200 μm using 30 μm thick photo resist mask in Inductively Coupled Plasma system with Cl2/BCl3 chemistry. Resultant etch rate/etch profiles are studied as a function of ICP process parameters and photo resist mask sidewall profile. Etch yield and aspect ratio variation with process pressure and substrate bias is also investigated at constant ICP power. The etch yield of ICP process increased with pressure due to reactant limited etch mechanism and reached a maximum of ∼19 for 200 μm depth at 50 mTorr pressure, 950 W coil power, 80 W substrate bias with an etch rate ∼4.9 μm/min. Final aspect ratio of etched holes is increased with pressure from 1.02 at 20 mTorr to 1.38 at 40 mTorr respectively for fixed etch time and then decreased to 1.24 at 50 mTorr pressure. The resultant final etch profile and undercut is found to have a strong dependence on the initial slope of photo resist mask sidewall angle and its selectivity in the pressure range of 20–50mTorr.