کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691189 1011300 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma
چکیده انگلیسی

The investigation of Al2O3 etch characteristics in the BCl3/Ar inductively coupled plasma was carried out in terms of effects of input process parameters (gas pressure, input power, bias power) on etch rate and etch selectivity over poly-Si and photoresist. It was found that, with the changes in gas pressure and input power, the Al2O3 etch rate follows the behavior of ion current density while the process rate is noticeably contributed by the chemical etch pathway. The influence of input power on the etch threshold may be connected with the concurrence of chemical and physical etch pathways in ion-assisted chemical reaction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1198–1202
نویسندگان
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