Keywords: نرخ اچ; Transformer coupled toroidal plasma; Etch rate; Pyrolysis; Neutral gas temperature; CFD
مقالات ISI نرخ اچ (ترجمه نشده)
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Keywords: نرخ اچ; Etch rate; Activation energy; X-ray reflectivity; Morphology; Selective etching; Electrical resistance
Keywords: نرخ اچ; Metal assisted chemical etching; Silver particles; Platinum particles; Etch rate; Doping concentration
Angular dependences of SiO2 etch rates at different bias voltages in CF4, C2F6, and C4F8 plasmas
Keywords: نرخ اچ; Angular dependence; Etch rate; Faraday cage; Fluorocarbon plasma; Steady-state fluorocarbon film;
Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet
Keywords: نرخ اچ; Atmospheric pressure plasma jet; Photoresist etching; Surface analysis; Etch rate;
Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films
Keywords: نرخ اچ; IGZO; Dry etching; Inductively coupled plasmas; Chlorine-based discharges; Fluorine-based discharges; Etch characteristics; Etch rate; Etch selectivity;
Study on The Performance of PECVD Silicon Nitride Thin Films
Keywords: نرخ اچ; Silicon nitride; Stress; Inductively coupled plasma; Etch rate; Selectivity
GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching
Keywords: نرخ اچ; Gallium nitride; High electron mobility transistors; Mesa; Inductively coupled plasma etching; Etch rate; Surface roughness
Real-time virtual metrology and control for plasma etch
Keywords: نرخ اچ; Virtual metrology; Plasma etch; Predictive functional control; Electron density; Etch rate; Advanced process control;
HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma
Keywords: نرخ اچ; Etch rate; HfO2; Etch mechanism; Plasma modeling
Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas
Keywords: نرخ اچ; Ga–ZnO; HBr-based plasma; Etch rate; Etch mechanism
The dry etching of a sol–gel deposited ZnO thin film in a high density BCl3/Ar plasma
Keywords: نرخ اچ; Zinc oxide; Plasma etching; Etch rate; Selectivity; X-ray Photoelectron Spectroscopy
Absolute etch rates in alkaline etching of silicon (1 1 1)
Keywords: نرخ اچ; Alkaline etching; Silicon; Etch rate; Activation energy; Etch pits; Mask effects
Selective formation of silicon nanowires on pre-patterned substrates
Keywords: نرخ اچ; Lithography patterning; Silicon nanowires; Electroless metal deposition; Etch rate; Ratio of length-to-width;
Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma
Keywords: نرخ اچ; Al2O3; Etch rate; Etch threshold; Sputtering; Selectivity
Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma
Keywords: نرخ اچ; Ba2Ti9O20(BTO); Pt; Etch rate; Dissociation; Ionization; Etch mechanism; Cl2/Ar plasma modeling
On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma
Keywords: نرخ اچ; ZrO2; Etch rate; Dissociation; Ionization; Etch mechanism; BCl3/Ar plasma modeling
Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates
Keywords: نرخ اچ; PECVD; Silicon nitride; Annealing; Optical properties; Etch rate
Etching characteristics and plasma-induced damage of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma
Keywords: نرخ اچ; BST thin film; Etch rate; Chemical shifts; Plasma-induced damage
Self-consistent global model for inductively coupled Cl2 plasma: Comparison with experimental data and application for the etch process analysis
Keywords: نرخ اچ; Cl2 plasma; Dissociation; Rate coefficient; Etch rate
The effects of diffusion coefficient on the etching process of sacrificial oxide layers
Keywords: نرخ اچ; Diffusion coefficient; etch rate; sacrificial oxide; Micro-electro-mechanical systems
Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma
Keywords: نرخ اچ; MgO; Etch rate; Dissociation; Ionization; Sputtering; Desorption; Etch mechanism
Copper etching with cupric chloride and regeneration of waste etchant
Keywords: نرخ اچ; Copper etching; Cupric chloride; Etch rate; Waste regeneration
Characterization of anisotropic wet etching properties of single crystal silicon: Effects of ppb-level of Cu and Pb in KOH solution
Keywords: نرخ اچ; Silicon; Anisotropic etching; Impurity; Etch rate; Surface roughness
In situ defect etching of strained-Si layers with HCl gas
Keywords: نرخ اچ; 61.72.Ff, 61.10.Nz, 81.15.Gh; Defect characterization; Threading dislocations; Strained-Si; Silicon germanium; Etch rate; EPD;
ECR plasma etching of GaAs in CCl2F2/Ar/O2 discharge and IR studies of the etched surface
Keywords: نرخ اچ; 52.77.Bn; 81.65.Cf; ECR; Plasma discharges; SEM; Anisotropic etching; Etch rate;
The influence of the laser spot size and the pulse number on laser-induced backside wet etching
Keywords: نرخ اچ; 81.65.C; 81.05.K; 79.20.D; 71.80.B; 68.03.F; 47.55.D; 43.25.Y; 42.70.C; 42.55.L; Excimer laser; Laser etching; Pulse number; Laser spot size; Etch rate;
Etch-stop characteristics of heavily B/Ge-doped silicon epilayer in KOH and TMAH
Keywords: نرخ اچ; Wet etch; Etch-stop; Etch rate; Activation energy; TMAH; KOH;
Dominant rate process of silicon surface etching by hydrogen chloride gas
Keywords: نرخ اچ; Etch rate; Silicon; Hydrogen chloride; Dominant rate process;
Etching characteristics of Pb(Zr,Ti)O3 thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas: effect of gas mixing ratios
Keywords: نرخ اچ; 52.77.Bn; PZT; Etch rate; Electron temperature; Dissociation; Ion-assisted etching;
Etching characteristics and mechanisms of SrBi2Ta2O9 thin films in CF4/Ar and Cl2/Ar inductively coupled plasmas
Keywords: نرخ اچ; 52.75.Rx; SBT; Etch rate; Electron temperature; Dissociation; Ion-assisted etching;
Effect of gas mixing ratio on MgO etch behaviour in inductively coupled BCl3/Ar plasma
Keywords: نرخ اچ; MgO; Etch rate; Electron temperature; Dissociation; Ion-assisted etching;
Status of ion track technology-Prospects of single tracks
Keywords: نرخ اچ; Electro-conduction; Electro-replication; Etch rate; GMR effect; Ion tracks; Magnetic effects; Nanochannels; Nanowires; Real-time control; Single-tracks; Spintronics; Transport;