کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
80067 | 49372 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates](/preview/png/80067.png)
چکیده انگلیسی
The optical properties and etch rates of silicon nitride (SiNx:H) deposited by plasma-enhanced chemical vapour deposition (PECVD) and their correlation with bond concentrations have been studied. By varying the silane-to-total gas ratio, films with refractive index (n) between 1.92 and 3.00 were deposited. Higher n films had increased absorption and decreased etch rates. Annealing the samples at different temperatures revealed that all films were thermally stable up to 750 °C, above which all experienced a rise in n, attributed mainly to mass densification. The etch rate correlated well the N–H bond concentration for both annealed and as-deposited films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 9, September 2008, Pages 1091–1098
Journal: Solar Energy Materials and Solar Cells - Volume 92, Issue 9, September 2008, Pages 1091–1098
نویسندگان
Daniel N. Wright, Erik S. Marstein, Atle Rognmo, Arve Holt,