کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691190 | 1011300 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of interface states at Au/SnO2/n-Si (MOS) structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The purpose of this paper is to characterize the interface states in Au/SnO2/n-Si (MOS) structures. The characteristic parameters of the interface states are derived from capacitance-voltage (C-V) and conductance-voltage (G/Ï-V) measurements as a function of frequency. The C-V and G/Ï-V measurements have been carried out in the frequency range of 1Â kHz to 1Â MHz at room temperature. At each frequency, the measured capacitance and conductance decrease with increasing frequency due to a continuous distribution of the interface states. The frequency dispersion in capacitance and conductance can be interpreted in terms of the interface state density (Nss) and series resistance (Rs). Especially at low frequencies, the interface states can follow the ac signal and yield an excess capacitance. Due to a continuous density distribution of interface states, the C and G/Ï values decrease in depletion region with increasing frequencies. At high frequencies, the effect of series resistance on the capacitance is found appreciable due to the interface state capacitance decreasing with increasing frequency. Experimental results show that the locations of interface states between SnO2/Si and series resistance have a significant effect on electrical characteristics of MOS structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1203-1207
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1203-1207
نویسندگان
A. TataroÄlu, Å. Altındal,