کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691266 | 1011305 | 2009 | 5 صفحه PDF | دانلود رایگان |

Germanium carbon (GeC) thin films were prepared on ZnS substrates by reactive RF magnetron sputtering in Ar and CH4 mixtures with a Ge disc as the target. H content in the films was studied as a function of the deposition parameters and low H content GeC film was obtained. RF power had a little effect on IR absorptions, hence had a little effect on H content. IR absorption of the GeC film increased a little with the increase in partial pressure of CH4 as well as total pressure of gas mixture. Increase in substrate temperature decomposed CH4 and CHx in the GeC film into C and H and H was desorbed from the film, lowering the IR absorption. However, high substrate temperature prevented CH4 or CHx from adsorbing onto the substrate, which decreased C content in the GeC film and increased the film's refractive index. Higher annealing temperature of the GeC film reduced H content, but high annealing temperature (500 °C) caused the graphitization of the GeC film and destroyed its continuity.
Journal: Vacuum - Volume 83, Issue 6, 12 February 2009, Pages 965–969