New nanocrystalline powder substrates for nitrides layer epitaxy

In this paper, authors present some results of the growth of nitrides layer by the metal-organic vapor-phase epitaxy (MOVPE) technique on new nanocrystalline powder substrates (compressed Al2O3+SiC). The influence of substrate composition (the amount of SiC powder) on the properties of the GaN layer are presented. Also the impact of the conditions of epitaxial process on properties of the nitride layers are discussed.