کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691300 | 1011308 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Ultra-thin (5 and 6 nm) silicon oxynitride layers have been fabricated by the plasma-enhanced chemical vapour deposition (PECVD) process. Split experiments with annealing of the deposited dielectric layers were performed using the RTP reactor and a standard furnace, both at 900 °C. Possible changes in properties, structure and chemical composition of the obtained layers were investigated by means of spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterisation of manufactured test structures (metal-insulator-semiconductor (MIS) capacitors and MISFETs). The results achieved have shown that annealing at high temperature causes improvement of the properties of ultra-thin silicon oxynitride layers (e.g. lower interface traps density, lower leakage currents within the dielectric layer and lower charge-pumping currents of the MISFETs). The observed improvement in electro-physical properties can be attributed to the increase of the SiON phase. Moreover, comparison between the physical thickness and the equivalent oxide thickness (EOT) of the layers shows a decrease in physical thickness obtained by using the silicon oxynitride layer instead of the classical silicon dioxide. These findings are important for the consideration of chances of PECVD oxynitride layer application for CMOS technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 10, 3 June 2008, Pages 1013-1019
Journal: Vacuum - Volume 82, Issue 10, 3 June 2008, Pages 1013-1019
نویسندگان
Robert MroczyÅski, Norbert Kwietniewski, MichaÅ Äwil, Patrick Hoffmann, Romuald B. Beck, Andrzej Jakubowski,