کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691635 | 1011324 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural evolution of PZTN thin films produced by pulsed laser ablation deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The study of highly oriented Nb-doped PZT thin films deposited by laser ablation on n-type (111) Si substrates is reported. Sintered ceramics based on the nominal composition Pb0.995(Zr0.65Ti0.35)0.99Nb0.01O3 (PZTN) with an excess of PbO were used as targets. The films were deposited using the 3rd harmonic (355 nm) of a pulsed Nd:YAG laser (7 ns pulse duration) with 7 J/cm2 fluence, at different oxygen pressures (from 10â1 to 10â4 mbar) and at a vacuum of 10â6 mbar. The substrate temperature was varied in the range of 500-600 °C. In optimized conditions, the as-deposited PZT-based films show perovskite structure oriented along the (110) direction with minor impurities (PbO), as revealed from X-ray diffraction spectra. Further, microstructural analysis of the as-grown including chemical composition is also presented. The relationship between composition of the target, deposition conditions and film properties are then discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 12, 8 August 2008, Pages 1375-1378
Journal: Vacuum - Volume 82, Issue 12, 8 August 2008, Pages 1375-1378
نویسندگان
M. Pereira, M.J.M. Gomes,