کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691639 | 1011324 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Physical properties of high pressure reactively sputtered hafnium oxide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering (HPRS) at pressures between 0.8 and 1.6 mbar. Growth, composition and morphology were investigated using Transmission Electron Microscopy (TEM), Heavy Ion Elastic Recoil Detection Analysis (HI-ERDA), Fourier Transform Infrared spectroscopy (FTIR) and X-Ray Diffraction (XRD). The growth rate was found to decrease exponentially with deposition pressure. The films showed a monoclinic polycrystalline structure, with higher grain size for intermediate pressures. All the films were slightly oxygen rich with respect to stoichiometric HfO2, which is attributed to the oxygen plasma. Additionally, it was observed the formation of an interfacial silicon oxide layer, with a minimum thickness for deposition pressures around 1.2 mbar. These results are explained by the oxidation action of the oxygen plasma and the diffusion of oxygen through the grain boundaries of the HfO2 film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 12, 8 August 2008, Pages 1391-1394
Journal: Vacuum - Volume 82, Issue 12, 8 August 2008, Pages 1391-1394
نویسندگان
M. Toledano-Luque, F.L. MartÃnez, E. San Andrés, A. del Prado, I. Mártil, G. González-DÃaz, W. Bohne, J. Röhrich, E. Strub,