The influence of electric field on the microstructure of nc-Si:H films produced by RF magnetron sputtering

Hydrogenated nanocrystalline silicon thin films were prepared by RF magnetron sputtering. Different bias fields (no bias-no ground, grounded and negative bias) were applied to the substrate. The effect of the ion bombardment on the structure, chemical and optical property were studied by Raman spectroscopy, X-ray diffraction, Rutherford backscattering (RBS) and optical transmission spectroscopy. The deposition rate and the optical bandgap decrease as the bias voltage increases from 0 to −50 V. The structural characterization indicates that compressive stress is developed in plane and tensile stress is induced in the growth direction. No significant variation on the chemical composition was observed.