Studies on p-type copper (I) selenide crystalline thin films for hetero-junction solar cells

Deposition of polycrystalline copper (I) selenide thin films onto glass substrates at relatively low temperature (95 °C) have been carried out by chemical route using optimized preparative conditions. The XRD pattern confirmed the formation of copper (I) selenide semiconducting films with orthorhombic structure. A direct-type transition with band gap energy of 1.73 eV was reported from optical absorption studies. p-Type behavior confirmed from sign of thermally induced voltage (thermo-emf), which may find interesting applications in hetero-junction solar cells as an absorber layer.