کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691746 | 1011330 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Synthesis of DLC films by PECVD combined with hollow cathode sputtering Synthesis of DLC films by PECVD combined with hollow cathode sputtering](/preview/png/1691746.png)
The mechanical and electrical properties of aluminium-doped diamond-like carbon (DLC) thin films obtained with a hybrid method combining hollow magnetron discharge sputtering and plasma-enhanced chemical vapour deposition (PECVD) are reported. The ratio between the mass flows of methane reactive gas and argon inert gas was found to have a big influence on the properties of doped DLC films. For low mass flow of methane gas the cathode surface was kept in a metallic state. By increasing methane mass flow the cathode surface became to be covered with DLC and the behaviour of the discharge changed, influencing the properties of deposited films. The lowest resistivity (10−4 Ω cm) of thin films was obtained in the metallic state of the cathode but without DLC character, as indicated by Raman measurements. The resistivity increased in the intermediate mode (0.01 Ω cm) and attained higher value (1 Ω cm) in the poisoned state of the cathode. These films presented DLC character, with D and G bands, as revealed by Raman measurements.
Journal: Vacuum - Volume 80, Issue 7, 31 May 2006, Pages 736–739