کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691757 1011330 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of substrate temperature on tin-doped indium oxide films deposited by dc arc discharge ion plating
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Effects of substrate temperature on tin-doped indium oxide films deposited by dc arc discharge ion plating
چکیده انگلیسی

Indium tin oxide (ITO) films were deposited on glass substrate at temperatures ranging from room temperature to 120 °C by the dc arc discharge ion plating technique. The electrical properties and crystallinity of ITO films were investigated. The resistivity of ITO films decreased with the increase of the substrate temperature in deposition, mostly due to increase in Hall mobility above 90 °C. The resistivity of ITO film obtained at temperature 120 °C was 1.33×10−4 Ω cm. The ITO films crystallized at the substrate temperature higher than 90 °C and the grain size estimated from the (2 2 2) peak in the direction parallel to the surface of the substrate became large with the increase of the substrate temperature. That the Hall mobility increased with the increase of the substrate temperature was speculated to be due to the increase of the grain size in the direction parallel to the surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 80, Issue 7, 31 May 2006, Pages 783–787
نویسندگان
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