کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691796 | 1011333 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering](/preview/png/1691796.png)
چکیده انگلیسی
In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti [Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307].
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 8, 14 April 2008, Pages 867–870
Journal: Vacuum - Volume 82, Issue 8, 14 April 2008, Pages 867–870
نویسندگان
Jens Emmerlich, Stanislav Mráz, Rony Snyders, Kaiyun Jiang, Jochen M. Schneider,