کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691838 | 1011343 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characterization of some binary chalcogen compounds by explosive laser irradiation and heat treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis and characterization of some binary chalcogen compounds by explosive laser irradiation and heat treatment Synthesis and characterization of some binary chalcogen compounds by explosive laser irradiation and heat treatment](/preview/png/1691838.png)
چکیده انگلیسی
The thin film preparation of Se, Ge, Sn monolayers and also binary chalcogenide alloys with their various structures and morphologies have been thoroughly studied. A new phase of the composite materials was identified. The short range ordering structure of chalcogens when mixed up with four-fold-coordinated atoms like Ge and Sn produce alloys or compounds with a certain specific characteristic. Laser impulse on these materials caused rapid cooling allowing the materials to form alloys. The optical measurements of the chalcogen films are reported. The transmittance versus wavelength measurement in the UV-VIS-NIR was studied and the optical band gaps of the films were calculated to be 1.48Â eV for Ge-Se and 1.65Â eV for Sn-Se for the wavelength range 300-1100Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 1, 12 September 2007, Pages 45-49
Journal: Vacuum - Volume 82, Issue 1, 12 September 2007, Pages 45-49
نویسندگان
S. Kar, A.K. Maiti, K. Goswami,