کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691850 | 1011343 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of particle free epitaxal AlN thin films by reactive PLD combined with an electron beam and a rotating crucible
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
An AlN epitaxial film without projections or spiral growth features was successfully fabricated on a (0 0 0 1) sapphire substrate by reactive laser ablation of a liquid Al target in NH3 using a 248 nm laser. The liquid Al target was prepared with an electron beam in a rotating crucible. The surface of the rotating liquid Al target was always smooth. Spiral growth features were greatly suppressed. AlN films have a surface roughness less than 0.3 nm. The X-ray rocking curve's narrowest FWHM was 180 arcsec, which is nearly identical to that recently reported in films grown by MOCVD or reactive MBE.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 1, 12 September 2007, Pages 109–112
Journal: Vacuum - Volume 82, Issue 1, 12 September 2007, Pages 109–112
نویسندگان
Tadashi Kitahara, Norio Ichikawa, Yoshiro Nomoto,