Mass attenuation coefficients, effective atomic numbers and electron densities of undoped and differently doped GaAs and InP crystals

The total mass attenuation coefficients (μ/ρ), for GaAs, GaAs (semi-insulating; S-I) GaAs:Si (N+), GaAs:Zn, InP:Fe, InP:Fe–As, InP:S and InP:Zn crystals were measured at 22.1, 25.0, 59.5 and 88.0 keV photon energies. The samples were irradiated with 109Cd and 241Am radioactive point sources using transmission arrangement. The X- and γ-rays were counted by a Si (Li) detector with resolution of 160 eV at 5.9 keV. Total atomic and electronic cross-sections (σt and σe), effective atomic numbers (Zeff) and electron densities (Nel) were determined using the obtained μ/ρ values for the investigated crystals.