(As,Sb)In/GaInSb quantum well for infrared detection enhancement

The control of the growth of InGaAs on GaAs(1 1 0) vicinal substrates by means of molecular beam epitaxy (MBE) produces self-organized structures. These structures can be used for detection purposes. A superlattice of ten periods of InGaAs was grown over a GaAs substrate at 430 °C to form an infrared detector. Atomic force microscopy was used to study the superficial morphology, showing that the samples have high regularity, periodicity and a low number or dislocations. The photo-luminescence spectroscopy at environment temperature illustrates that the effective range of detection starts in 1400 nm reaching the maximum in 1600 nm, which is an interesting wavelength in stars detection. If the parameters are perfectly controlled enhanced self-patterned structures for infrared detection can be built by MBE on this GaAs facet.