Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

• The ferromagnetic/normal/ferromagnetic silicene junction is explored.
• The electron tunneling is very sensitive to the length modulation.
• The valley conductance can be control by electric field and exchange field.
• A fully valley polarized conductance with efficient transmission is found.

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.