Quantum interference effects in chemical vapor deposited graphene

• We investigated the quantum phase-coherent electronic transport properties of CVD-grown graphene.
• CVD-grown graphene exhibited weak localization, weak antilocalization and universal conductance fluctuations.
• The weak localization behavior converts into the weak antilocalization near the Dirac point.

We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the micropore-formed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices.