کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1785910 | 1023399 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24Â ÃÂ 10â11 A and increased photo to dark current contrast ratio was achieved at 10Â V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10Â V compared to samples without HfO2 insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO2 insulating layer and the calculated barrier height was obtained as 0.95Â eV. The peak responsivity of HfO2 inserted device was 0.44Â mA/W at bias voltage of 15Â V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 12, December 2014, Pages 1703-1706
Journal: Current Applied Physics - Volume 14, Issue 12, December 2014, Pages 1703-1706
نویسندگان
Manoj Kumar, Burak Tekcan, Ali Kemal Okyay,