Unipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate

• Amorphous Pr0.7Ca0.3MnO3 film is grown on a Pt/Ti/SiO2/Si using a PLD method.
• Pt/APCMO/Pt device shows the unipolar resistive switching behavior.
• XPS analysis shows the role of electrode as an oxygen reservoir in switching process.
• The LRS conduction behavior of the Pt/APCMO/Pt device is followed Ohm's law.
• The conduction mechanism in the HRS is explained by Schottky emission.

Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt–Si) substrate at temperatures below 500 °C and the Pt/APCMO/Pt–Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt–Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.