کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1786395 | 1023415 | 2013 | 4 صفحه PDF | دانلود رایگان |
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10−5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.
► We investigate the phosphorus in-situ doping characteristics in germanium.
► Phosphorus in-situ doped profile exhibits a box-shaped junction formation.
► The modeling and the experimental results are in very good agreement.
► Phosphorus in-situ doping diffusivity is low enough to form shallow junction.
Journal: Current Applied Physics - Volume 13, Issue 6, August 2013, Pages 1060–1063