Fano resonance in electronic transport induced by the magnetic confinement in a graphene nanoribbon

• The magnetic confinement-induced Fano resonance in graphene is studied.
• The condition for the magnetic confinement and the localized states is examined.
• The scattering with the localized states is modeled by photon-assisted tunneling.
• The electrical conductance is drastically changed near the sharp Fano resonances.

Based on the Floquet scattering theory, a model of graphene-based electronic device is presented, in which electrical transport is controlled by adjusting Dirac fermions energy near resonance conditions. The presence of an oscillating field leads to the Fano resonance in transport through a magnetic structure in an armchair graphene nanoribbon (AGNR). The Fano resonance originates from bound states of the magnetic confinement, according to subband indices in the AGNR. The ballistic conductance is markedly affected by the Fano resonance due to the quasi-one-dimensional nature of AGNRs. The results may help realizing graphene electronics with the resonant characteristics in the conductance.