کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1786524 1023418 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics
چکیده انگلیسی

Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (Ion), off-current (Ioff), current ratio (Ion/Ioff), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (fT) and maximum oscillation frequency (fmax) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and Ion of 35 μA/μm were obtained. For this device, fT and fmax were 80 GHz and 800 GHz, respectively.


► We have optimized the electrical performances of PNPN SNW TFETs by using TCAD simulation.
► The design optimization was carried out in terms of on-current, off-current, and subthreshold swing.
► Basic radio frequency performances fT and fmax are analyzed.
► For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and Ion of 35 μA/μm were obtained.
► fT and fmax were 80 GHz and 800 GHz, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 12, Issue 3, May 2012, Pages 673–677
نویسندگان
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