کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1786595 1023419 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application
چکیده انگلیسی

Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of ±12 V and ±5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro- and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated polydimethylesiloxane (PDMS) mold at 170 °C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 °C with good thermal stability.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 2, Supplement, March 2011, Pages e30–e34
نویسندگان
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