کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786648 | 1023420 | 2013 | 5 صفحه PDF | دانلود رایگان |
We investigated the effect of rapid thermal annealing (RTA) on the electrical, optical and structural properties of In–Zn–Sn–O (IZTO) films prepared by spin-coating process using IZTO nanoink. By using conventional spin-coating process using IZTO nanoink, we could coat the IZTO film on a glass substrate under atmospheric ambient. At optimized RTA temperature of 700 °C and working pressure of 100 Torr under pure nitrogen ambient, we were able to obtain a spin-coated IZTO films with a sheet resistance of 45 Ω/square and transmittance of 81.62% at 550 nm wavelength. This indicates that the IZTO film prepared by simple spin-coating printing is a visible alternative to high cost sputtered-IZTO films and possibility of solution-based transparent electrode for cost-efficient solution based optoelectronic devices.
► The spin-coated In–Zn–Sn–O films was investigated as a printable TCO electrode.
► The effect of RTA on the properties of IZTO films was investigated.
► The optimized IZTO film showed Rsh of 45 Ω/square and transmittance of 81.62%.
Journal: Current Applied Physics - Volume 13, Supplement 2, 20 July 2013, Pages S177–S181