A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement

► We present a novel SiGe-on-insulator MOSFET with modified channel band energy. ► The key idea in this work is to modify the band energy in the channel. ► We have employed graded Ge composition profile in the channel. ► The proposed structure exhibit excellent properties and better reliability.