کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787008 | 1023429 | 2012 | 4 صفحه PDF | دانلود رایگان |

We investigated the field-effect transistor (FET) characteristics of 15-μm graphene-covered copper wires (G-wires). Unlike the previously reported graphene FET, carries initially showed p-type like FET characteristics in two-terminal transport measurements. Our results indicate that the electrical transport processes in a G-wire FET occur in both the heavily p-doped contact and the p-doped radial graphene channel, as a p-channel. The interfacial potential barrier between the contact electrode and the radial graphene channel is small, but there is a radial potential barrier that limits electrical transport through the copper core in chemical vapor deposition (CVD) grown samples. The p-type FET characteristics appeared clearly after the oxidation of the G-wires.
► We were successful to produce the graphene-covered copper wires (G-wire).
► In two-terminal measurement, the carriers initially showed p-type FET characteristics.
► Both contact and radial graphene channels contribute to the electrical transport.
Journal: Current Applied Physics - Volume 12, Issue 1, January 2012, Pages 115–118