کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787178 | 1023433 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface properties and cell response of fluoridated hydroxyapatite/TiO2 coated on Ti substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface properties and cell response of fluoridated hydroxyapatite/TiO2 coated on Ti substrate Surface properties and cell response of fluoridated hydroxyapatite/TiO2 coated on Ti substrate](/preview/png/1787178.png)
چکیده انگلیسی
Dense and well-crystallized TiO2 and fluoridated hydroxyapatite (FHAp) films with TiO2 as a buffer layer were deposited on Ti substrates using a sol-gel spin-coating technique. X-ray diffraction showed a positive correlation between the level of Fâ incorporation into the HAp structure and the crystallinity of the HAp phase and the concentration of the FHAp phase. The decrease in water contact angle was attributed mainly to the increase in total surface energy of the FHAp/Ti and FHAp/TiO2/Ti as well as the increased polar component in FHAp. The FTIR spectra of the FHAp coated samples showed a weak absorption band at PO43- (1040 and 1092Â cmâ1) and P-O (875Â cmâ1), and several strong absorption bands between 3450 and 3550Â cmâ1 due to F-OH and OHâ. The critical load values measured by the scanning scratch tester showed that the adhesion strength of the FHAp/TiO2 coated Ti substrate was 1.2-1.7 times higher than that of the HAp and FHAp coated Ti substrate. The level of cell attachment on FHAp and FHAp/TiO2 coated Ti substrates were 1.4 and 1.7 times higher than that on the HAp coated Ti substrate, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 2, March 2009, Pages 528-533
Journal: Current Applied Physics - Volume 9, Issue 2, March 2009, Pages 528-533
نویسندگان
H.U. Lee, Y.S. Jeong, S.Y. Park, S.Y. Jeong, H.G. Kim, C.R. Cho,