کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1787578 1023446 2007 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Control of surfaces and heterointerfaces of AlGaN/GaN system for sensor devices and their on-chip integration on nanostructures
چکیده انگلیسی

For successful construction of sensor devices and their future on-chip integration on nanostructures, this paper discusses the present status of understanding and control of surfaces and heterointerfaces of the AlGaN/GaN material system by reviewing a series of works recently carried out by the authors’ group.Leakage currents in Schottky contacts are explained by the authors’ thin surface barrier (TSB) model. An important role is played by oxygen shallow donors in leakage in AlGaN Schottky diodes. A large leakage reduction has been achieved by a novel surface control process for oxygen gettering. An unprecedented high sensitivity has been obtained in AlGaN/GaN Schottky diode hydrogen sensor by applying the surface control process. Liquid-phase AlGaN/GaN sensors having an open-gate HFET structure show a very good pH sensing capability as well as a good sensing capability of polar liquids. Finally, the selective MBE growth of AlGaN/GaN nanowire network is discussed as a basic hardware structure for the on-chip integration of sensors, paying attention to the heterointerface control.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 7, Issue 3, March 2007, Pages 318–327
نویسندگان
,