کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787884 | 1023454 | 2012 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing](/preview/png/1787884.png)
Metal-induced crystallization method is one of the favorable non-laser crystallization methods for thin-film transistors in large-area displays. However, it is necessary to reduce metal contamination in the film to lower leakage current for the device applications. A new two-step crystallization method, consisting of a nucleation step by AlCl3 vapor-induced crystallization and a grain growth step by a pulsed rapid thermal annealing, has been proposed to increase the grain size and reduce the residual metal contamination in crystallized poly-Si films. The grain size of the poly-Si film crystallized by the VIC + PRTA two-step crystallization process was as large as 70 μm. Furthermore, the Al concentration in the poly-Si film was reduced by two orders of magnitude from 1 × 1020 cm−3 by VIC only process to 1.4 × 1018 cm−3 by the two-step process. As a result, the minimum leakage current of poly-Si TFTs using the poly-Si film prepared by the two-step process was reduced from 1.9 × 10−10 A/μm to 2.8 × 10−11 A/μm at a drain voltage of 5 V, without carrier mobility degradation.
► We have proposed a novel two-step crystallization process.
► The process consists of initial crystallization by VIC and grain growth by PRTA.
► The grain size of the poly-Si film crystallized by the VIC + PRTA was increased.
► The Al concentration in the poly-Si film was reduced by the two-step process.
► The leakage current was decreased by reducing the Al concentration.
Journal: Current Applied Physics - Volume 12, Issue 6, November 2012, Pages 1454–1458