کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1787894 1023454 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of current-voltage and capacitance-voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Investigation of current-voltage and capacitance-voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode
چکیده انگلیسی
Ag/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current-voltage (I-V) characteristics at a wide temperature range between 75 and 350 K and also the capacitance-voltage (C-V) characteristics at room temperature for 1 MHz have been analyzed in detail. The measured I-V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance-voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I-V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C-V characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 12, Issue 6, November 2012, Pages 1510-1514
نویسندگان
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