Aerial image formation of quantum lithography for diffraction limit

Since the diffraction limit of Rayleigh criterion hardly creates finer features, the development for the quantum lithography of entangled photons, one of technologies beyond the diffraction limit, is a key merit without the shorter wavelength source tool. In the arbitrary pattern formation for the commercialization of this lithography, however, this quantum lithography is required to implement mask patterns and the conventional optical lithography. In this paper, for the quantum lithography of entangled photons, collective behavior of N-photon entangled states is modeled and simulated to show the effect of photon entangled states for 3-dimensional arbitrary pattern formation by using the rigorous coupled wave analysis (RCWA) and Kirchhoff analysis. For the enhanced resolution from the point of view that the de Broglie wavelength of a quantum state comprised of two entangled photons is half the classical wavelength associated with either photon, simulation results of entangled photons are similar to those of short wavelengths. However, both of simulation results show that the resolution of entangled photons is better than those of the shorter wavelengths. Simulation results can predict realistic better performance of entangled photons.

► The quantum lithography of N-photon entangled states is modeled and simulated.
► An analytical method, rigorous coupled wave analysis (RCWA), and Kirchhoff's analysis are used.
► The resolution of entangled photons is compared with that of the reduced wavelength.
► The results expect that the resolution of N-photon entangled photons is more enhanced.