کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1788091 1023459 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Sulfurization temperature effects on the growth of Cu2ZnSnS4 thin film
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Sulfurization temperature effects on the growth of Cu2ZnSnS4 thin film
چکیده انگلیسی

We made Cu2ZnSnS4 (CZTS) thin films by sulfurization of Cu/Sn/Cu/Zn metallic films. Sulfurizations were carried out under different thermal annealing conditions, where maximum temperatures were 440 °C (LT-CZTS) and 550 °C (HT-CZTS). For LT-CZTS films, secondary phases such as SnS2 and Cu2−xS were observed, whereas for HT-CZTS films secondary impurities were not detected. Chemical composition of LT-CZTS film was observed to be very non-uniform. Highly Sn-rich and Zn-rich regions were found on the film surface of LT-CZTS. However, averaged chemical composition for larger area was close to stoichiometry. The HT-CZTS film showed homogeneous structural and chemical composition features. But, for HT-CZTS film, the Sn composition was observed to be decreased, which was due to the Sn-loss. By UV–Visible spectroscopy, optical band gaps of LT- and HT-CZTS films were measured to be ∼1.33 eV and ∼1.42 eV, respectively. The band gap of LT-CZTS film was also observed to be smaller by photoluminescence measurement. The depressed band gap of LT-CZTS film may be ascribed to some defects and low band gap impurities such as Cu2SnS3 and Cu2-xS in the LT-CZTS film.


► Two different CZTS films were made by sulfurization of Cu/Sn/Cu/Zn metallic films, where one (LT-CZTS) was sulfurized at 440 °C and the other (HT-CZTS) at 550 °C.
► The band gaps of LT-CZTS and HT-CSTS were observed to be ∼1.33 eV and ∼1.42 eV, respectively.
► The lower band gap for LT-CZTS is attributed to secondary phases with low band gaps such as Cu2SnS3 and Cu2–xS and possible defects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 12, Issue 4, July 2012, Pages 1052–1057
نویسندگان
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