کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788157 | 1023462 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Subsecond melt processing for achieving SiGe layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Subsecond melt processing for achieving SiGe layers Subsecond melt processing for achieving SiGe layers](/preview/png/1788157.png)
چکیده انگلیسی
Flash lamp annealing induced rapid melting of a near surface Ge enriched Si wafer and the subsequent formation of SiGe layers were demonstrated. The formation of an undesirable facetted liquid/solid interface, well known for pulse melting in the millisecond time regime, was found to decrease significantly due to the increasing melting temperature of Si with reducing Ge concentration at the SiGe/Si interface. A dislocation network and the existence of strain, which were evidenced by transmission electron microscopy and μ-Raman measurements, respectively, are expected to play an important role to form thin SiGe layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 5, September 2010, Pages 1309–1312
Journal: Current Applied Physics - Volume 10, Issue 5, September 2010, Pages 1309–1312
نویسندگان
Matthias Voelskow, Aloke Kanjilal, Wolfgang Skorupa,