Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Intense pulsed light; Photonic sintering; Temperature simulation;
مقالات ISI لامپ فلش آنیلینگ (ترجمه نشده)
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Keywords: لامپ فلش آنیلینگ; Photovoltaic; Intense pulsed light; Flash lamp annealing; Photonic sintering;
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Pulsed light sintering; Semiconductors;
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Indium tin oxide; Polyimide substrate; Flexible display; Electrical resistivity; Thermal expansion mismatch;
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Amorphous silicon; Polycrystalline silicon; Crystallization; Film stress;
Keywords: لامپ فلش آنیلینگ; Photovoltaic; Spray coating; Flash lamp annealing; Silicon nanoparticle; In-line spectroscopic ellipsometry; Raman spectroscopy; Scanning electron microscopy; Atomic force microscopy
Structural and electrical properties of Se-hyperdoped Si via ion implantation and flash lamp annealing
Keywords: لامپ فلش آنیلینگ; Ion implantation; Silicon; Flash lamp annealing; Selenium; Substitutional fraction;
Microstructure and charge trapping in ZrO2- and Si3N4-based superlattice layer systems with Ge nanoparticles
Keywords: لامپ فلش آنیلینگ; Germanium; Nanocrystals; Zirconium oxide; Silicon nitride; Superlattice; Flash lamp annealing; Charge trapping;
Structural and optical studies of Pr implanted ZnO films subjected to a long-time or ultra-fast thermal annealing
Keywords: لامپ فلش آنیلینگ; Zinc oxide; Atomic layer deposition; Rare-earth; Ion implantation; Praseodymium; Rapid thermal annealing; Flash lamp annealing; Channeling Rutherford backscattering spectrometry; High-resolution X-ray diffraction; Photoluminescence;
III-V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
Keywords: لامپ فلش آنیلینگ; Ion implantation; Flash lamp annealing; III-V integration; Germanium; Liquid phase epitaxy;
Optimization of the post-deposition annealing process of high-mobility In2O3:H for photovoltaic applications
Keywords: لامپ فلش آنیلینگ; In2O3:H; TCO; High mobility; Flash lamp annealing; Crystallization;
The control of the film stress of Cat-CVD a-Si films and its impact on explosive crystallization induced by flash lamp annealing
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Amorphous silicon; Polycrystalline silicon; Crystallization; Film stress; Explosive crystallization
Xe-arc flash annealing of indium tin oxide thin-films prepared on glass backplanes
Keywords: لامپ فلش آنیلینگ; Indium tin oxide (ITO); Flash lamp annealing; Multiple reflection; Electrical resistance; Optical transmittance;
Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films
Keywords: لامپ فلش آنیلینگ; Boron; Flash lamp annealing; Ion activation; Polycrystalline Si thin films
Flash-lamp annealing of ZnO-layers on copper-indium-gallium-sulphide layers: A spectroscopic ellipsometry study
Keywords: لامپ فلش آنیلینگ; Cu(In,Ga)S2; Spectroscopic ellipsometry; Flash lamp annealing; FLA; ZnO;
Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
Keywords: لامپ فلش آنیلینگ; GaAs; Quantum dots; Ion implantation; Flash lamp annealing; Silicon
Flash-lamp-induced explosive crystallization of amorphous germanium films leaving behind periodic microstructures
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Explosive crystallization; Polycrystalline germanium; Periodic structure;
Mechanism and control of crack generation in glass substrates during crystallization of a-Si Films by flash lamp annealing
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Polycrystalline silicon; Crystallization; Crack; Glass
Electrical properties of polycrystalline silicon films formed from amorphous silicon films by flash lamp annealing
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Polycrystalline silicon; Mobility; Hall effect; Grain boundary
Flash-lamp-crystallized polycrystalline silicon films with remarkably long minority carrier lifetimes
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Crystallization; Polycrystalline silicon; Hydrogen passivation; Minority carrier lifetime; Thin-film solar cell
Subsecond melt processing for achieving SiGe layers
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; TEM; Raman; RBS; Ion implantation
Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Polycrystalline silicon; High-pressure water-vapor annealing; Minority carrier lifetime
Drastic suppression of the optical reflection of flash-lamp-crystallized poly-Si films with spontaneously formed periodic microstructures
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Crystallization; Reflectance; Polycrystalline silicon; Solar cell; Antireflection coatings; Transmission electron microscopy; Atomic force microscopy
Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing
Keywords: لامپ فلش آنیلینگ; Catalytic CVD; Flash lamp annealing; Polycrystalline Si; Hydrogen content; Dehydrogenation; Glass substrate; Adhesion; Plasma-enhanced CVD
Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films
Keywords: لامپ فلش آنیلینگ; Crystallization; Raman scattering; Secondary ion mass spectroscopy (SIMS); Silicon; Solar cells; Microcrystalline; Minority carrier lifetime; Flash lamp annealing
Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Advanced annealing technique; Junction stability; Atomistic simulation; Dopant deactivation; Diffusion
Advanced thermal processing of semiconductor materials in the millisecond range
Keywords: لامپ فلش آنیلینگ; Flash lamp annealing; Ultra shallow junctions; Hetroepitaxy; Silicon; Silicon carbide;