کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788786 | 1023479 | 2010 | 4 صفحه PDF | دانلود رایگان |
Polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor a-Si films are found to hardly lose hydrogen (H) atoms during crystallization and keep the initial H concentration on the order of 1021/cm3. Short annealing duration and sufficient Si film thickness would lead to the suppression of H desorption. A characteristic lateral crystallization mechanism, referred to as explosive crystallization (EC), may also contribute to the prevention of H desorption due to rapid lateral heat diffusion into neighboring a-Si. Poly-Si films after annealing under N2 or forming gas ambient shows remarkably long minority carrier lifetime compared to untreated films, indicating effective defect termination by H atoms remaining in the poly-Si films.
Journal: Current Applied Physics - Volume 10, Issue 3, Supplement, May 2010, Pages S402–S405