III-V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing

A combination of n-type III-V compound semiconductors and p-type Ge for future CMOS device technology is a possible way to satisfy the demand for higher device performance. In this work, an alternative method to integrate III-V's into Ge is achieved by using a combination of ion implantation and short-time flash lamp annealing. With this process InAs nanocrystals are formed within a Ge substrate for the first time. Raman spectroscopy, scanning electron microscopy, Auger electron spectroscopy element mapping as well as transmission electron microscopy are performed to investigate these nanocrystal regarding size, shape and crystalline quality. Experiments show epitaxial growth of the III-V compound within the Ge matrix and a liquid phase epitaxy mechanism is used to describe the nanocrystal formation. Finally, the microstructural properties are compared for InAs nanocrystals in a Ge and a Si matrix.