کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788231 | 1023464 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of highly conducting and transparent Al doped CdO thin films by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Highly conducting and transparent aluminum doped CdO thin films were deposited using pulsed laser deposition technique. The effect of growth temperature on structural, electrical, and optical properties was studied. It is observed that the film orientation changes from preferred (1 1 1) plane to (2 0 0) plane with increase in growth temperature. The electrical resistivity of the films was found to increase with increase in growth temperature. The low resistivity of 4.3 × 10−5 Ω cm and high transparency (∼85%) was obtained for the film grown at 150 °C. The band gap of the films varies from 2.74 eV to 2.84 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 3, May 2009, Pages 673–677
Journal: Current Applied Physics - Volume 9, Issue 3, May 2009, Pages 673–677
نویسندگان
R.K. Gupta, K. Ghosh, R. Patel, S.R. Mishra, P.K. Kahol,