Characterization of transparent and conductive electrodes of Nb-doped SnO2 thin film by pulsed laser deposition

Nb-doped SnO2 thin films were deposited on glass substrate by pulsed laser deposition. The structural, optical and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature and thickness. The structural properties of electrodes were studied by X-ray diffraction analysis and field emission scanning electron microscope images. The Optical properties of electrodes were studied by recording the UV–visible transmittance curves. The electrical properties were investigated by the four-point probe sheet resistance and hall-effect measurements. For 500 nm thick SnO2: 4 wt.% Nb2O5 film deposited at 500 °C and 60 m Torr of oxygen partial pressure, an electrical resistivity 6.65 × 10−3 Ω cm with an average optical transmittance in visible range (400–800 nm) of 85%, and an optical band gap of 4.27 eV was observed.

► Transparent conducting oxide.
► Pulsed laser deposition.
► Low electrical resistivity.