Cu(In,Ga)Se2 thin film solar cells from nanoparticle precursors

A non-vacuum process for Cu(In,Ga)Se2 (CIGS) thin film solar cells from nanoparticle precursors was described in this work. CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials (CuI, InI3, GaI3 and Na2Se) in organic solvents, by which fine CIGS nanoparticles of about 15 nm in diameter were obtained. The nanoparticle precursors were then deposited onto Mo/glass substrate by the doctor blade technique. After heat treating the CIGS/Mo/glass layers in Se gas atmosphere, a complete solar cell structure was fabricated by depositing the other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.